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igbt igbtwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD06N60R 600vtrenchstop tm rc-seriesforhardswitchingapplications datasheet industrialpowercontrol
2 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 igbtwithintegrateddiodeinpackagesofferingspacesavingadvantage features: trenchstop tm reverseconducting(rc)technologyfor600v applicationsoffering ?optimisedv cesat andv f forlowconductionlosses ?smoothswitchingperformanceleadingtolowemilevels ?verytightparameterdistribution ?operatingrangeof1to20khz ?maximumjunctiontemperature175c ?shortcircuitcapabilityof5s ?bestinclasscurrentversuspackagesizeperformance ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant(forpg-to252:solder temperature260c,msl1) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?consumermotordrives keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKD06N60R 600v 6a 1.65v 175c k06r60 pg-to252-3 g c e g e c
3 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e g e c
4 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 maximumratings parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 12.0 6.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 18.0 a turn off safe operating area v ce 600v, t vj 175c, t p =1s - 18.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 12.0 6.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 18.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t c =25c p tot 100.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, reflow soldering (msl1 according to jedec j-sta-020) 260 c thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, 1) junction - case r th(j-c) 1.50 k/w diode thermal resistance, 2) junction - case r th(j-c) 3.60 k/w thermal resistance, min. footprint junction - ambient r th(j-a) 75 k/w thermal resistance, 6cm2 cu on pcb junction - ambient r th(j-a) 50 k/w 1) rth/zth based on single cooling pulse. please be aware that a correct rth measurement of the igbt, is not possible using a thermocouple. 2) rth/zth based on single cooling pulse. please be aware that a correct rth measurement of the diode, is not possible using a thermocouple. g c e g e c
5 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =6.0a t vj =25c t vj =175c - - 1.65 1.85 2.10 - v diode forward voltage v f v ge =0v, i f =6.0a t vj =25c t vj =175c - - 1.70 1.70 2.10 - v gate-emitter threshold voltage v ge(th) i c =0.11ma, v ce = v ge 4.3 5.0 5.7 v zero gate voltage collector current 1) i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 1000.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =6.0a - 3.4 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 470 - output capacitance c oes - 24 - reverse transfer capacitance c res - 14 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =6.0a, v ge =15v - 48.0 - nc short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =25c - 46 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 12 - ns rise time t r - 7 - ns turn-off delay time t d(off) - 127 - ns fall time t f - 152 - ns turn-on energy e on - 0.11 - mj turn-off energy e off - 0.22 - mj total switching energy e ts - 0.33 - mj t vj =25c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g =23.0 w , l s =60nh, c s =40pf l s , c s fromfig.e 1) not subject to production test - verified by design/characterization g c e g e c
6 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 68 - ns diode reverse recovery charge q rr - 0.37 - c diode peak reverse recovery current i rrm - 12.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -211 - a/s t vj =25c, v r =400v, i f =6.0a, di f /dt =800a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 12 - ns rise time t r - 10 - ns turn-off delay time t d(off) - 164 - ns fall time t f - 171 - ns turn-on energy e on - 0.20 - mj turn-off energy e off - 0.36 - mj total switching energy e ts - 0.56 - mj t vj =175c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g =23.0 w , l s =60nh, c s =40pf l s , c s fromfig.e diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 74 - ns diode reverse recovery charge q rr - 0.80 - c diode peak reverse recovery current i rrm - 17.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -237 - a/s t vj =175c, v r =400v, i f =6.0a, di f /dt =800a/s g c e g e c
7 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 1. collectorcurrentasafunctionofswitching frequency ( t vj 175c, t a =55c, d =0.5, v ce =400v, v ge =15/0v, r g =23 w ,pcbmounting,6cm2 cu, ptot=2,4w) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 0.1 1 10 100 0 1 2 3 4 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 t p =1s 50s 20s 10s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 110 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 g c e g e c
8 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 5. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 2 4 6 8 10 12 14 16 18 v ge =20v 17v 15v 13v 11v 9v 7v figure 6. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 2 4 6 8 10 12 14 16 18 v ge =20v 17v 15v 13v 11v 9v 7v figure 7. typicaltransfercharacteristic ( v ce =10v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 6 8 10 12 14 0 3 6 9 12 15 18 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i c =3a i c =6a i c =12a g c e g e c
9 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, r g =23 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 2 4 6 8 10 12 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, i c =6a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 10 20 30 40 50 60 70 80 1 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =6a, r g =23 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.11ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 1 2 3 4 5 6 7 typ. min. max. g c e g e c
10 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, r g =23 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 2 4 6 8 10 12 0.0 0.2 0.4 0.6 0.8 1.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, i c =6a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 10 20 30 40 50 60 70 80 0.0 0.2 0.4 0.6 0.8 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =6a, r g =23 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =15/0v, i c =6a, r g =23 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 350 400 450 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 e off e on e ts g c e g e c
11 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 17. typicalgatecharge ( i c =6a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 10 20 30 40 50 0 2 4 6 8 10 12 14 16 120v 480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t vj =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 14 16 18 20 0 10 20 30 40 50 60 70 80 90 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t vj 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 2 4 6 8 10 12 14 g c e g e c
12 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 21. igbttransientthermalimpedanceasa functionofpulsewidth 1) (seepage4) ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.1032 7.9e-5 2 0.7299 4.0e-4 3 0.5682 1.8e-3 4 0.0638 0.0307 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth 2) (seepage4) ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 1.0958 7.9e-5 2 1.6643 2.8e-4 3 0.7461 1.7e-3 4 0.0827 0.02494 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 600 700 800 900 0 50 100 150 200 t j =175c, i f = 6a t j =25c, i f = 6a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 600 700 800 900 0.0 0.2 0.4 0.6 0.8 1.0 t j =175c, i f = 6a t j =25c, i f = 6a g c e g e c
13 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 600 700 800 900 8 10 12 14 16 18 20 t j =175c, i f = 6a t j =25c, i f = 6a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 600 700 800 900 -400 -300 -200 -100 0 t j =175c, i f = 6a t j =25c, i f = 6a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 0 2 4 6 8 10 12 14 16 18 t j =25c, u g =0v t j =175c, u g =0v figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 i f =3a i f =6a i f =12a g c e g e c
14 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 g c e g e c p g - t o 2 5 2 - 3
15 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 g c e g e c p g - t o 2 5 2 - 3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3
16 IKD06N60R trenchstop tm rc-seriesforhardswitchingapplications rev.2.5,2014-03-12 revisionhistory IKD06N60R revision:2014-03-12,rev.2.5 previous revision revision date subjects (major changes since last revision) 1.2 2010-01-12 - 2.1 2011-01-17 release of final datasheet 2.2 2013-02-19 change package 2.3 2013-12-10 neu value ices max limit at 175c 2.4 2014-02-26 without pb free logo 2.5 2014-03-12 storage temp -55...+150c welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g e c p g - t o 2 5 2 - 3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3

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